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The Journal of The Korea Institute of Intelligent Transport Systems Vol.10 No.1 pp.42-48
X-대역 GaN HEMT Bare-Chip 펄스-전압 펄스-RF수동 로드-풀 측정
Pulsed-Bias Pulsed-RF Passive Load-Pull Measurement of an X-Band GaN HEMTBare-chip
Abstract
In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.
