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Design of High Efficiency Class-J mode Power Amplifier using GaN HEMT with Broad-band Characteristic
Journal of Korean Society of Intelligent Transport Systems :: Vol.10 No.5 pp.71-78
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Pulsed-Bias Pulsed-RF Passive Load-Pull Measurement of an X-Band GaN HEMTBare-chip
Journal of Korean Society of Intelligent Transport Systems :: Vol.10 No.1 pp.42-48
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Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT
Journal of Korean Society of Intelligent Transport Systems :: Vol.9 No.5 pp.72-79
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