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The Journal of The Korea Institute of Intelligent Transport Systems Vol.9 No.5 pp.72-79
GaN HEMT를 이용한 고효율 스위칭 모드 도허티 전력증폭기 설계
Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT
Abstract
In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of 100 μs and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6 %, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.
