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The Journal of The Korea Institute of Intelligent Transport Systems Vol.10 No.5 pp.71-78
GaN HEMT를 이용한 광대역 고효율 Class-J 모드 전력증폭기 설계
Design of High Efficiency Class-J mode Power Amplifier using GaN HEMT with Broad-band Characteristic
Abstract
In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of 40 ± 1 dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.
